Jared Kearns (Sony, Japan)
"Mode Control of Long-Cavity Blue and Green VCSELs"
Hiroshi Fujioka (The University of Tokyo, Japan)
"Characteristics and Applications of GaN Films Prepared by Low Temperature Plasma Process"
Satoshi Kamiyama (Meijo University, Japan)
Ryo Tanaka (FUJI ELECTRIC CO., LTD., Japan)
"Recent Development and Future Prospects of Vertical GaN Power Devices"
Henryk Turki (Institute of High Pressure Physics of the Polish Academy of Science "Unipress", Poland)
"Buried Tunnel Junction for Inverted Current Flow in III-Nitride Structures"
Kengo Nagata (Nagoya University and Toyoda Gosei Co., Ltd., Japan)
"Development of High-Efficiency Algan Tunnel Junction Deep-UV Leds"
Subramaniam Arulkumaran (Nanyang Technological University, Singapore)
"High Breakdown Vertical GaN-on-GaN Schottky Diodes for α-Particle Detection"
Kazuki Ohnishi (Nagoya University, Japan)
"Halide Vapor Phase Epitaxy of P-Type GaN for Fabricating Vertical GaN Power Devices (Tentative)"
Biplab Sarkar (Indian Institute of Technology, Roorkee, Uttarakhand, India)
"Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs"
ISPlasma2022 / IC-PLANTS2022 Secretariat
Inter Group Corp.
Orchid Building 8F, 2-38-2, Meieki, Nakamura-ku, Nagoya, 450-0002 JAPAN